IRFHE4250DTRPBF
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionHEXFET POWER MOSFET
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet IRFHE4250DTRPBF Datasheet
-
ECAD Model
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In Stock: 9,161
Can ship immediately
Pricing:
- 1$1.79
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Technical Details
- Series:HEXFET®
- Package:Bulk
- Part Status:Active
- FET Type:2 N-Channel (Dual)
- FET Feature:Standard
- Drain to Source Voltage (Vdss):25V
- Current - Continuous Drain (Id) @ 25°C:86A (Tc), 303A (Tc)
- Rds On (Max) @ Id, Vgs:2.75mOhm @ 27A, 10V, 900µOhm @ 27A, 10V
- Vgs(th) (Max) @ Id:2.1V @ 35µA, 2.1V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:20nC, 53nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:1735pF @ 13V, 4765pF @ 13V
- Power - Max:156W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:32-PowerVFQFN
- Supplier Device Package:32-PQFN (6x6)
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