EPC2105
EPC
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionGAN TRANS ASYMMETRICAL HALF BRID
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet EPC2105 Datasheet
-
ECAD Model
- Share
In Stock: 672
Can ship immediately
Pricing:
- 1$7.14
- 500$5.03484
- 1,000$4.5476
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Technical Details
- Series:eGaN®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:2 N-Channel (Half Bridge)
- FET Feature:GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss):80V
- Current - Continuous Drain (Id) @ 25°C:9.5A, 38A
- Rds On (Max) @ Id, Vgs:14.5mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V
- Vgs(th) (Max) @ Id:2.5V @ 2.5mA, 2.5V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs:2.5nC @ 5V, 10nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds:300pF @ 40V, 1100pF @ 40V
- Power - Max:-
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:Die
- Supplier Device Package:Die
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