DF11MR12W1M1B11BOMA1
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionIGBT MODULE
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet DF11MR12W1M1B11BOMA1 Datasheet
-
ECAD Model
- Share
In Stock: 227
Can ship immediately
Pricing:
- 1$120
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Technical Details
- Series:*
- Package:Bulk
- Part Status:Active
- FET Type:2 N-Channel (Dual)
- FET Feature:Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss):1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C:50A
- Rds On (Max) @ Id, Vgs:23mOhm @ 50A, 15V
- Vgs(th) (Max) @ Id:5.5V @ 20mA
- Gate Charge (Qg) (Max) @ Vgs:125nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds:3950pF @ 800V
- Power - Max:20mW
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Chassis Mount
- Package / Case:Module
- Supplier Device Package:Module
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