SQ1912EH-T1_GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET 2 N-CH 20V 800MA SC70-6
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet SQ1912EH-T1_GE3 Datasheet
-
ECAD Model
- Share
In Stock: 1,294
Can ship immediately
Pricing:
- 1$0.46
- 3,000$0.14415
- 6,000$0.13587
- 15,000$0.12759
- 30,000$0.11766
- 75,000$0.11352
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Technical Details
- Series:Automotive, AEC-Q101, TrenchFET®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:2 N-Channel (Dual)
- FET Feature:Standard
- Drain to Source Voltage (Vdss):20V
- Current - Continuous Drain (Id) @ 25°C:800mA (Tc)
- Rds On (Max) @ Id, Vgs:280mOhm @ 1.2A, 4.5V
- Vgs(th) (Max) @ Id:1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:1.15nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:75pF @ 10V
- Power - Max:1.5W
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:6-TSSOP, SC-88, SOT-363
- Supplier Device Package:SC-70-6
