CSD87312Q3E

Technical Details

• Series:NexFET™
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:2 N-Channel (Dual) Common Source
• FET Feature:Logic Level Gate
• Drain to Source Voltage (Vdss):30V
• Current - Continuous Drain (Id) @ 25°C:27A
• Rds On (Max) @ Id, Vgs:33mOhm @ 7A , 8V

• Vgs(th) (Max) @ Id:1.3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:8.2nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds:1250pF @ 15V
• Power - Max:2.5W
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:8-PowerTDFN
• Supplier Device Package:8-VSON (3.3x3.3)