SI4936BDY-T1-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET 2N-CH 30V 6.9A 8-SOIC
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet SI4936BDY-T1-GE3 Datasheet
-
ECAD Model
- Share
In Stock: 2,581
Can ship immediately
Pricing:
- 1$1.38
- 2,500$0.64663
- 5,000$0.61627
- 12,500$0.59458
Quote It
Technical Details
- Series:TrenchFET®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:2 N-Channel (Dual)
- FET Feature:Logic Level Gate
- Drain to Source Voltage (Vdss):30V
- Current - Continuous Drain (Id) @ 25°C:6.9A
- Rds On (Max) @ Id, Vgs:35mOhm @ 5.9A, 10V
- Vgs(th) (Max) @ Id:3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:530pF @ 15V
- Power - Max:2.8W
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package:8-SO
Related Products
MOSFET 2N-CH 60V 7A
- 1: $1.42000
MOSFET 2N-CH 40V 8A 8SOIC
- 1: $1.44000
MOSFET 2 N-CHANNEL 30V 8A 8SOIC
- 1: $1.44000
