SI7900AEDN-T1-E3

Technical Details

• Series:TrenchFET®
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:2 N-Channel (Dual) Common Drain
• FET Feature:Logic Level Gate
• Drain to Source Voltage (Vdss):20V
• Current - Continuous Drain (Id) @ 25°C:6A
• Rds On (Max) @ Id, Vgs:26mOhm @ 8.5A, 4.5V

• Vgs(th) (Max) @ Id:900mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:16nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds:-
• Power - Max:1.5W
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:PowerPAK® 1212-8 Dual
• Supplier Device Package:PowerPAK® 1212-8 Dual