SQJ960EP-T1_GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET 2N-CH 60V 8A
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet SQJ960EP-T1_GE3 Datasheet
-
ECAD Model
- Share
In Stock: 3,095
Can ship immediately
Pricing:
- 1$2.07
- 3,000$1.05024
- 6,000$1.01379
Quote It
Technical Details
- Series:Automotive, AEC-Q101, TrenchFET®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:2 N-Channel (Dual)
- FET Feature:Logic Level Gate
- Drain to Source Voltage (Vdss):60V
- Current - Continuous Drain (Id) @ 25°C:8A
- Rds On (Max) @ Id, Vgs:36mOhm @ 5.3A, 10V
- Vgs(th) (Max) @ Id:2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:735pF @ 25V
- Power - Max:34W
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® SO-8 Dual
- Supplier Device Package:PowerPAK® SO-8 Dual
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