IPG20N06S2L35ATMA1
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET 2N-CH 55V 20A 8TDSON
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet IPG20N06S2L35ATMA1 Datasheet
-
ECAD Model
- Share
In Stock: 4,065
Can ship immediately
Pricing:
- 1$1.31
- 5,000$0.55457
- 10,000$0.53371
Quote It
Technical Details
- Series:Automotive, AEC-Q101, OptiMOS™
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:2 N-Channel (Dual)
- FET Feature:Logic Level Gate
- Drain to Source Voltage (Vdss):55V
- Current - Continuous Drain (Id) @ 25°C:20A
- Rds On (Max) @ Id, Vgs:35mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:2V @ 27µA
- Gate Charge (Qg) (Max) @ Vgs:23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:790pF @ 25V
- Power - Max:65W
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-PowerVDFN
- Supplier Device Package:PG-TDSON-8-4
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