BSC0910NDIATMA1
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET 2N-CH 25V 16A/31A TISON8
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet BSC0910NDIATMA1 Datasheet
-
ECAD Model
- Share
In Stock: 4,592
Can ship immediately
Pricing:
- 1$2.22
- 5,000$1.02022
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Technical Details
- Series:OptiMOS™
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:2 N-Channel (Dual) Asymmetrical
- FET Feature:Logic Level Gate, 4.5V Drive
- Drain to Source Voltage (Vdss):25V
- Current - Continuous Drain (Id) @ 25°C:11A, 31A
- Rds On (Max) @ Id, Vgs:4.6mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:6.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:4500pF @ 12V
- Power - Max:1W
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-PowerTDFN
- Supplier Device Package:PG-TISON-8
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