BSM180D12P3C007
ROHM Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionSIC POWER MODULE
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet BSM180D12P3C007 Datasheet
-
ECAD Model
- Share
In Stock: 208
Can ship immediately
Pricing:
- 1$563.26
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Technical Details
- Series:-
- Package:Bulk
- Part Status:Active
- FET Type:2 N-Channel (Dual)
- FET Feature:Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss):1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C:180A (Tc)
- Rds On (Max) @ Id, Vgs:-
- Vgs(th) (Max) @ Id:5.6V @ 50mA
- Gate Charge (Qg) (Max) @ Vgs:-
- Input Capacitance (Ciss) (Max) @ Vds:900pF @ 10V
- Power - Max:880W
- Operating Temperature:175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:Module
- Supplier Device Package:Module
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