CSD86336Q3DT

Technical Details

• Series:NexFET™
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:2 N-Channel (Half Bridge)
• FET Feature:Logic Level Gate, 5V Drive
• Drain to Source Voltage (Vdss):25V
• Current - Continuous Drain (Id) @ 25°C:20A (Ta)
• Rds On (Max) @ Id, Vgs:9.1mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V

• Vgs(th) (Max) @ Id:1.9V @ 250µA, 1.6V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:3.8nC @ 45V, 7.4nC @ 45V
• Input Capacitance (Ciss) (Max) @ Vds:494pF @ 12.5V, 970pF @ 12.5V
• Power - Max:6W
• Operating Temperature:-55°C ~ 125°C
• Mounting Type:Surface Mount
• Package / Case:8-PowerTDFN
• Supplier Device Package:8-VSON (3.3x3.3)