BSM300D12P3E005
ROHM Semiconductor- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionSILICON CARBIDE POWER MODULE. B
- CategoryTransistors - FETs, MOSFETs - Arrays
-
ECAD Model
- Share
In Stock: 158
Can ship immediately
Pricing:
- 1$1371.43
Quote It
Technical Details
- Series:-
- Package:Bulk
- Part Status:Active
- FET Type:2 N-Channel (Half Bridge)
- FET Feature:Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss):1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C:300A (Tc)
- Rds On (Max) @ Id, Vgs:-
- Vgs(th) (Max) @ Id:5.6V @ 91mA
- Gate Charge (Qg) (Max) @ Vgs:-
- Input Capacitance (Ciss) (Max) @ Vds:14000pF @ 10V
- Power - Max:1260W (Tc)
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Chassis Mount
- Package / Case:Module
- Supplier Device Package:Module
Related Products
1200V, 576A, HALF BRIDGE, FULL S
- 1: $1785.00000
SILICON CARBIDE POWER MODULE. B
- 1: $2142.86000
P-CHANNEL MOSFET
- 1: $0.14000
N-CHANNEL, MOSFET
- 1: $0.19000
4A, 60V, P-CHANNEL MOSFET
- 1: $0.24000
TRANS MOSFET P-CH 200V 4.4A 3PIN
- 1: $0.27000
2.2A 250V 2.000 OHM N-CHANNEL
- 1: $0.29000
