FDC6561AN
ON Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET 2N-CH 30V 2.5A SSOT6
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet FDC6561AN Datasheet
-
ECAD Model
- Share
In Stock: 249
Can ship immediately
Pricing:
- 1$0.56
- 3,000$0.21695
- 6,000$0.20296
- 15,000$0.18896
- 30,000$0.17916
Quote It
Technical Details
- Series:PowerTrench®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:2 N-Channel (Dual)
- FET Feature:Logic Level Gate
- Drain to Source Voltage (Vdss):30V
- Current - Continuous Drain (Id) @ 25°C:2.5A
- Rds On (Max) @ Id, Vgs:95mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id:3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:3.2nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds:220pF @ 15V
- Power - Max:700mW
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package:SuperSOT™-6
Related Products
MOSFET 2N-CH 8-SOIC
- 1: $0.57000
MOSFET 2N-CH 12V 6PICOSTAR
- 1: $0.58000
- 3000: $0.58000
- 6000: $0.54134
