SQS966ENW-T1_GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CHAN 60V
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet SQS966ENW-T1_GE3 Datasheet
-
ECAD Model
- Share
In Stock: 863
Can ship immediately
Pricing:
- 1$0.97
- 3,000$0.41529
- 6,000$0.38833
- 15,000$0.37486
- 30,000$0.3675
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Technical Details
- Series:Automotive, AEC-Q101, TrenchFET®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:2 N-Channel (Dual)
- FET Feature:Standard
- Drain to Source Voltage (Vdss):60V
- Current - Continuous Drain (Id) @ 25°C:6A (Tc)
- Rds On (Max) @ Id, Vgs:36mOhm @ 1.25A, 10V
- Vgs(th) (Max) @ Id:2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:8.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:572pF @ 25V
- Power - Max:27.8W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount, Wettable Flank
- Package / Case:PowerPAK® 1212-8W Dual
- Supplier Device Package:PowerPAK® 1212-8W Dual
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