FDD3510H
ON Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N/P-CH 80V 4.3/2.8A TO252
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet FDD3510H Datasheet
-
ECAD Model
- Share
In Stock: 650
Can ship immediately
Pricing:
- 1$1.25
- 2,500$0.55299
- 5,000$0.52687
- 12,500$0.5082
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Technical Details
- Series:PowerTrench®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N and P-Channel, Common Drain
- FET Feature:Logic Level Gate
- Drain to Source Voltage (Vdss):80V
- Current - Continuous Drain (Id) @ 25°C:4.3A, 2.8A
- Rds On (Max) @ Id, Vgs:80mOhm @ 4.3A, 10V
- Vgs(th) (Max) @ Id:4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:800pF @ 40V
- Power - Max:1.3W
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-252-5, DPak (4 Leads + Tab), TO-252AD
- Supplier Device Package:TO-252-4L
