NTJD1155LT1G
ON Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N/P-CH 8V 1.3A SOT363
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet NTJD1155LT1G Datasheet
-
ECAD Model
- Share
In Stock: 191
Can ship immediately
Pricing:
- 1$0.44
- 3,000$0.13771
- 6,000$0.12976
- 15,000$0.12181
- 30,000$0.11226
- 75,000$0.10828
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Technical Details
- Series:-
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N and P-Channel
- FET Feature:Standard
- Drain to Source Voltage (Vdss):8V
- Current - Continuous Drain (Id) @ 25°C:1.3A
- Rds On (Max) @ Id, Vgs:175mOhm @ 1.2A, 4.5V
- Vgs(th) (Max) @ Id:1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:-
- Input Capacitance (Ciss) (Max) @ Vds:-
- Power - Max:400mW
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:6-TSSOP, SC-88, SOT-363
- Supplier Device Package:SC-88/SC70-6/SOT-363
