IPG20N10S4L22AATMA1

Technical Details

• Series:OptiMOS™
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:2 N-Channel (Dual)
• FET Feature:Logic Level Gate
• Drain to Source Voltage (Vdss):100V
• Current - Continuous Drain (Id) @ 25°C:20A
• Rds On (Max) @ Id, Vgs:22mOhm @ 17A, 10V

• Vgs(th) (Max) @ Id:2.1V @ 25µA
• Gate Charge (Qg) (Max) @ Vgs:27nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds:1755pF @ 25V
• Power - Max:60W
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Surface Mount, Wettable Flank
• Package / Case:8-PowerVDFN
• Supplier Device Package:PG-TDSON-8-10