PMDPB58UPE,115
Nexperia
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET 2P-CH 20V 3.6A HUSON6
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet PMDPB58UPE,115 Datasheet
-
ECAD Model
- Share
In Stock: 152
Can ship immediately
Pricing:
- 1$0.45
- 3,000$0.1955
- 6,000$0.1845
- 15,000$0.1735
- 30,000$0.1658
Quote It
Technical Details
- Series:-
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:2 P-Channel (Dual)
- FET Feature:Logic Level Gate
- Drain to Source Voltage (Vdss):20V
- Current - Continuous Drain (Id) @ 25°C:3.6A
- Rds On (Max) @ Id, Vgs:67mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id:950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:9.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:804pF @ 10V
- Power - Max:515mW
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:6-UDFN Exposed Pad
- Supplier Device Package:6-HUSON-EP (2x2)
