SQJ912AEP-T1_GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET 2N-CH 40V 30A PPAK SO-8
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet SQJ912AEP-T1_GE3 Datasheet
-
ECAD Model
- Share
In Stock: 174
Can ship immediately
Pricing:
- 1$1.22
- 3,000$0.56972
- 6,000$0.54297
- 15,000$0.52387
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Technical Details
- Series:Automotive, AEC-Q101, TrenchFET®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:2 N-Channel (Dual)
- FET Feature:Standard
- Drain to Source Voltage (Vdss):40V
- Current - Continuous Drain (Id) @ 25°C:30A
- Rds On (Max) @ Id, Vgs:9.3mOhm @ 9.7A, 10V
- Vgs(th) (Max) @ Id:2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:38nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:1835pF @ 20V
- Power - Max:48W
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® SO-8 Dual
- Supplier Device Package:PowerPAK® SO-8 Dual
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