SI4900DY-T1-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET 2N-CH 60V 5.3A 8-SOIC
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet SI4900DY-T1-GE3 Datasheet
-
ECAD Model
- Share
In Stock: 215
Can ship immediately
Pricing:
- 1$1.31
- 2,500$0.5764
- 5,000$0.54758
- 12,500$0.52699
Quote It
Technical Details
- Series:TrenchFET®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:2 N-Channel (Dual)
- FET Feature:Logic Level Gate
- Drain to Source Voltage (Vdss):60V
- Current - Continuous Drain (Id) @ 25°C:5.3A
- Rds On (Max) @ Id, Vgs:58mOhm @ 4.3A, 10V
- Vgs(th) (Max) @ Id:3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:665pF @ 15V
- Power - Max:3.1W
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package:8-SO
