IRF7104PBF
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionHEXFET POWER MOSFET
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet IRF7104PBF Datasheet
-
ECAD Model
- Share
In Stock: 151
Can ship immediately
Pricing:
- 1$0.2
- 3,800$0.2
Quote It
Technical Details
- Series:HEXFET®
- Package:Tube
- Part Status:Obsolete
- FET Type:2 P-Channel (Dual)
- FET Feature:Logic Level Gate
- Drain to Source Voltage (Vdss):20V
- Current - Continuous Drain (Id) @ 25°C:2.3A
- Rds On (Max) @ Id, Vgs:250mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id:3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:290pF @ 15V
- Power - Max:2W
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package:8-SO
Related Products
HEXFET POWER MOSFET
- 1: $0.20000
SMALL SIGNAL FIELD-EFFECT TRANSI
- 1: $0.20000
PFET, 38A I(D), 55V, 0.003OHM, 1
- 1: $0.22000
P-CHANNEL POWER MOSFET
- 1: $0.23000
