EFC6602R-TR
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionPOWER FIELD-EFFECT TRANSISTOR
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet EFC6602R-TR Datasheet
-
ECAD Model
- Share
In Stock: 200
Can ship immediately
Pricing:
- 1$0.23
- 5,000$0.23
Quote It
Technical Details
- Series:-
- Package:Bulk
- Part Status:Active
- FET Type:2 N-Channel (Dual) Common Drain
- FET Feature:Logic Level Gate, 2.5V Drive
- Drain to Source Voltage (Vdss):12V
- Current - Continuous Drain (Id) @ 25°C:18A (Ta)
- Rds On (Max) @ Id, Vgs:5.9mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id:1.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:55nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:-
- Power - Max:2W (Ta)
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:6-XFBGA, WLCSP
- Supplier Device Package:6-WLCSP (1.81x2.7)
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