IRF9910PBF
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionN-CHANNEL POWER MOSFET
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet IRF9910PBF Datasheet
-
ECAD Model
- Share
In Stock: 139
Can ship immediately
Pricing:
- 1$0.44
- 3,800$0.44
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Technical Details
- Series:HEXFET®
- Package:Tube
- Part Status:Obsolete
- FET Type:2 N-Channel (Dual)
- FET Feature:Logic Level Gate
- Drain to Source Voltage (Vdss):20V
- Current - Continuous Drain (Id) @ 25°C:10A, 12A
- Rds On (Max) @ Id, Vgs:13.4mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:2.55V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:11nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:900pF @ 10V
- Power - Max:2W
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package:8-SO
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