EPC2100ENGRT
EPC
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionGANFET 2 N-CH 30V 9.5A/38A DIE
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet EPC2100ENGRT Datasheet
-
ECAD Model
- Share
In Stock: 168
Can ship immediately
Pricing:
- 1$5.1832
- 500$5.05281
- 1,000$4.56382
Quote It
Technical Details
- Series:eGaN®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:2 N-Channel (Half Bridge)
- FET Feature:GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss):30V
- Current - Continuous Drain (Id) @ 25°C:10A (Ta), 40A (Ta)
- Rds On (Max) @ Id, Vgs:8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V
- Vgs(th) (Max) @ Id:2.5V @ 4mA, 2.5V @ 16mA
- Gate Charge (Qg) (Max) @ Vgs:4.9nC @ 15V, 19nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds:475pF @ 15V, 1960pF @ 15V
- Power - Max:-
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:Die
- Supplier Device Package:Die
Related Products
ISL85402 - 2.5A REGULATOR WITH I
- 1: $6.12000
SYNCH TRANS 360HZ-2.6KHZ
- 1: $36.00000
RF S BAND, N-CHANNEL, MOSFET
- 1: $93.52000
RF L BAND, N-CHANNEL
- 1: $100.21000
PM-MOSFET-SIC-SBD~-SP1F
- 1: $121.84000
N CHANNEL ENHANCEMENT-MODE RF PO
- 1: $129.14000
LATERAL N CHANNEL SINGLE-ENDED B
- 1: $132.12000
RF ULTRA HIGH FREQUENCY BAND, N
- 1: $141.00000
RF N CHANNEL, MOSFET
- 1: $141.51000