FF6MR12KM1PHOSA1

Technical Details

• Series:CoolSiC™
• Package:Tray
• Part Status:Active
• FET Type:2 N-Channel (Half Bridge)
• FET Feature:Silicon Carbide (SiC)
• Drain to Source Voltage (Vdss):1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C:250A (Tc)
• Rds On (Max) @ Id, Vgs:5.81mOhm @ 250A, 15V

• Vgs(th) (Max) @ Id:5.15V @ 80mA
• Gate Charge (Qg) (Max) @ Vgs:496nC @ 15V
• Input Capacitance (Ciss) (Max) @ Vds:14700pF @ 800V
• Power - Max:-
• Operating Temperature:-40°C ~ 150°C (TJ)
• Mounting Type:Chassis Mount
• Package / Case:Module
• Supplier Device Package:AG-62MM