SSM6N36FE,LM
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET 2N-CH 20V 0.5A ES6
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet SSM6N36FE,LM Datasheet
-
ECAD Model
- Share
In Stock: 107
Can ship immediately
Pricing:
- 1$0.088
- 4,000$0.08713
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Technical Details
- Series:-
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:2 N-Channel (Dual)
- FET Feature:Logic Level Gate
- Drain to Source Voltage (Vdss):20V
- Current - Continuous Drain (Id) @ 25°C:500mA
- Rds On (Max) @ Id, Vgs:630mOhm @ 200mA, 5V
- Vgs(th) (Max) @ Id:1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:1.23nC @ 4V
- Input Capacitance (Ciss) (Max) @ Vds:46pF @ 10V
- Power - Max:150mW
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:SOT-563, SOT-666
- Supplier Device Package:ES6 (1.6x1.6)
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