SSM6N55NU,LF
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET 2N-CH 30V 4A UDFN6
- CategoryTransistors - FETs, MOSFETs - Arrays
-
ECAD Model
- Share
In Stock: 103
Can ship immediately
Pricing:
- 1$0.13794
- 3,000$0.13794
Quote It
Technical Details
- Series:-
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:2 N-Channel (Dual)
- FET Feature:Logic Level Gate
- Drain to Source Voltage (Vdss):30V
- Current - Continuous Drain (Id) @ 25°C:4A
- Rds On (Max) @ Id, Vgs:46mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id:2.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:2.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:280pF @ 15V
- Power - Max:1W
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:6-WDFN Exposed Pad
- Supplier Device Package:6-µDFN (2x2)
Related Products
MOSFET BVDSS: 25V-30V TSOT26
- 1: $0.14121
MOSFET BVDSS: 25V-30V TSOT26
- 1: $0.14121
MOSFET BVDSS: 25V-30V TSOT26
- 1: $0.14121
MOSFET BVDSS: 25V-30V TSOT26
- 1: $0.14121
MOSFET 25V~30V TSOT26
- 1: $0.14121
MOSFET BVDSS: 25V-30V TSOT26 T&R
- 1: $0.14302
- 3000: $0.14302
