SI7900AEDN-T1-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET 2N-CH 20V 6A PPAK 1212-8
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet SI7900AEDN-T1-GE3 Datasheet
-
ECAD Model
- Share
In Stock: 165
Can ship immediately
Pricing:
- 1$1.23
- 3,000$0.57634
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Technical Details
- Series:TrenchFET®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:2 N-Channel (Dual) Common Drain
- FET Feature:Logic Level Gate
- Drain to Source Voltage (Vdss):20V
- Current - Continuous Drain (Id) @ 25°C:6A
- Rds On (Max) @ Id, Vgs:26mOhm @ 8.5A, 4.5V
- Vgs(th) (Max) @ Id:900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:16nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:-
- Power - Max:1.5W
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® 1212-8 Dual
- Supplier Device Package:PowerPAK® 1212-8 Dual
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