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Technical Details

  • Series:HEXFET®
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Active
  • FET Type:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:15A
  • Rds On (Max) @ Id, Vgs:4.9mOhm @ 15A, 4.5V

 

  • Vgs(th) (Max) @ Id:1.1V @ 35µA
  • Gate Charge (Qg) (Max) @ Vgs:54nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:2245pF @ 10V
  • Power - Max:1.7W
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:DirectFET™ Isometric SA
  • Supplier Device Package:DIRECTFET™ SA

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