SI8900EDB-T2-E1

Technical Details

• Series:TrenchFET®
• Package:Tape & Reel (TR)
• Part Status:Active
• FET Type:2 N-Channel (Dual) Common Drain
• FET Feature:Logic Level Gate
• Drain to Source Voltage (Vdss):20V
• Current - Continuous Drain (Id) @ 25°C:5.4A
• Rds On (Max) @ Id, Vgs:-

• Vgs(th) (Max) @ Id:1V @ 1.1mA
• Gate Charge (Qg) (Max) @ Vgs:-
• Input Capacitance (Ciss) (Max) @ Vds:-
• Power - Max:1W
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:10-UFBGA, CSPBGA
• Supplier Device Package:10-Micro Foot™ CSP (2x5)