ALD212900ASAL
Advanced Linear Devices, Inc.
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET 2N-CH 10.6V 0.08A 8SOIC
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet ALD212900ASAL Datasheet
-
ECAD Model
- Share
In Stock: 103
Can ship immediately
Pricing:
- 1$5.7172
- 50$4.45301
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Technical Details
- Series:EPAD®, Zero Threshold™
- Package:Tube
- Part Status:Active
- FET Type:2 N-Channel (Dual) Matched Pair
- FET Feature:Logic Level Gate
- Drain to Source Voltage (Vdss):10.6V
- Current - Continuous Drain (Id) @ 25°C:80mA
- Rds On (Max) @ Id, Vgs:14Ohm
- Vgs(th) (Max) @ Id:10mV @ 20µA
- Gate Charge (Qg) (Max) @ Vgs:-
- Input Capacitance (Ciss) (Max) @ Vds:30pF @ 5V
- Power - Max:500mW
- Operating Temperature:0°C ~ 70°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package:8-SOIC
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