APTC60VDAM45T1G

Technical Details

• Series:CoolMOS™
• Package:Tray
• Part Status:Active
• FET Type:2 N-Channel (Dual)
• FET Feature:Super Junction
• Drain to Source Voltage (Vdss):600V
• Current - Continuous Drain (Id) @ 25°C:49A
• Rds On (Max) @ Id, Vgs:45mOhm @ 24.5A, 10V

• Vgs(th) (Max) @ Id:3.9V @ 3mA
• Gate Charge (Qg) (Max) @ Vgs:150nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds:7200pF @ 25V
• Power - Max:250W
• Operating Temperature:-40°C ~ 150°C (TJ)
• Mounting Type:Chassis Mount
• Package / Case:SP1
• Supplier Device Package:SP1