APTM100H46FT3G
Microchip Technology
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET 4N-CH 1000V 19A SP3
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet APTM100H46FT3G Datasheet
-
ECAD Model
- Share
In Stock: 156
Can ship immediately
Pricing:
- 1$76.69
- 100$50.3655
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Technical Details
- Series:POWER MOS 8™
- Package:Bulk
- Part Status:Active
- FET Type:4 N-Channel (H-Bridge)
- FET Feature:Standard
- Drain to Source Voltage (Vdss):1000V (1kV)
- Current - Continuous Drain (Id) @ 25°C:19A
- Rds On (Max) @ Id, Vgs:552mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id:5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs:260nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:6800pF @ 25V
- Power - Max:357W
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Chassis Mount
- Package / Case:SP3
- Supplier Device Package:SP3
