APTM100H35FT3G

Technical Details

• Series:-
• Package:Bulk
• Part Status:Active
• FET Type:4 N-Channel (H-Bridge)
• FET Feature:Standard
• Drain to Source Voltage (Vdss):1000V (1kV)
• Current - Continuous Drain (Id) @ 25°C:22A
• Rds On (Max) @ Id, Vgs:420mOhm @ 11A, 10V

• Vgs(th) (Max) @ Id:5V @ 2.5mA
• Gate Charge (Qg) (Max) @ Vgs:186nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds:5200pF @ 25V
• Power - Max:390W
• Operating Temperature:-40°C ~ 150°C (TJ)
• Mounting Type:Chassis Mount
• Package / Case:SP3
• Supplier Device Package:SP3