APTM120H29FG
Microchip Technology
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET 4N-CH 1200V 34A SP6
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet APTM120H29FG Datasheet
-
ECAD Model
- Share
In Stock: 130
Can ship immediately
Pricing:
- 1$299.12
- 100$224.8763
Quote It
Technical Details
- Series:POWER MOS 7®
- Package:Bulk
- Part Status:Active
- FET Type:4 N-Channel (H-Bridge)
- FET Feature:Standard
- Drain to Source Voltage (Vdss):1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C:34A
- Rds On (Max) @ Id, Vgs:348mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id:5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs:374nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:10300pF @ 25V
- Power - Max:780W
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Chassis Mount
- Package / Case:SP6
- Supplier Device Package:SP6
Related Products
1.2KV, 425A SWITCHING LOSS OPTIM
- 1: $741.25000
1.2 KV, 480A HIGH PERFORMANCE SI
- 1: $2123.75000
PM-MOSFET-SIC-SBD~-SP6C LI
- 1: $3851.11000
N-CH MOSFET 60V 0.34A SOT-363
- 1: $0.29000
N-CH MOSFET 30V 7.7A DFN2020-6L-
- 1: $0.38000
