BSO211PNTMA1
Rochester Electronics- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionPOWER FIELD-EFFECT TRANSISTOR, 4
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet BSO211PNTMA1 Datasheet
-
ECAD Model
- Share
In Stock: 136
Can ship immediately
Pricing:
- 1$0.37336
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Technical Details
- Series:OptiMOS™
- Package:Bulk
- Part Status:Obsolete
- FET Type:2 P-Channel (Dual)
- FET Feature:Logic Level Gate
- Drain to Source Voltage (Vdss):20V
- Current - Continuous Drain (Id) @ 25°C:4.7A
- Rds On (Max) @ Id, Vgs:67mOhm @ 4.7A, 4.5V
- Vgs(th) (Max) @ Id:1.2V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs:23.9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:920pF @ 15V
- Power - Max:2W
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package:P-DSO-8
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