IRF7509TR

Technical Details

• Series:HEXFET®
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Obsolete
• FET Type:N and P-Channel
• FET Feature:Logic Level Gate
• Drain to Source Voltage (Vdss):30V
• Current - Continuous Drain (Id) @ 25°C:2.7A, 2A
• Rds On (Max) @ Id, Vgs:110mOhm @ 1.4A, 10V

• Vgs(th) (Max) @ Id:1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:12nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds:210pF @ 25V
• Power - Max:1.25W
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
• Supplier Device Package:Micro8™