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Technical Details

  • Series:HEXFET®
  • Package:Tube
  • Part Status:Obsolete
  • FET Type:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:2.7A
  • Rds On (Max) @ Id, Vgs:90mOhm @ 2.7A, 4.5V

 

  • Vgs(th) (Max) @ Id:1.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:400pF @ 15V
  • Power - Max:960mW
  • Operating Temperature:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package:6-TSOP

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