IRF7379PBF

Technical Details

• Series:HEXFET®
• Package:Tube
• Part Status:Obsolete
• FET Type:N and P-Channel
• FET Feature:Standard
• Drain to Source Voltage (Vdss):30V
• Current - Continuous Drain (Id) @ 25°C:5.8A, 4.3A
• Rds On (Max) @ Id, Vgs:45mOhm @ 5.8A, 10V

• Vgs(th) (Max) @ Id:1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:25nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds:520pF @ 25V
• Power - Max:2.5W
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package:8-SO