APTM120A65FT1G
Microsemi
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET 2N-CH 1200V 16A SP1
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet APTM120A65FT1G Datasheet
-
ECAD Model
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In Stock: 169
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Technical Details
- Series:-
- Package:Bulk
- Part Status:Obsolete
- FET Type:2 N-Channel (Half Bridge)
- FET Feature:Standard
- Drain to Source Voltage (Vdss):1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C:16A
- Rds On (Max) @ Id, Vgs:780mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id:5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs:300nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:7736pF @ 25V
- Power - Max:390W
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Chassis Mount
- Package / Case:SP1
- Supplier Device Package:SP1
