SI7960DP-T1-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET 2N-CH 60V 6.2A PPAK SO-8
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet SI7960DP-T1-GE3 Datasheet
-
ECAD Model
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In Stock: 125
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Technical Details
- Series:TrenchFET®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Obsolete
- FET Type:2 N-Channel (Dual)
- FET Feature:Logic Level Gate
- Drain to Source Voltage (Vdss):60V
- Current - Continuous Drain (Id) @ 25°C:6.2A
- Rds On (Max) @ Id, Vgs:21mOhm @ 9.7A, 10V
- Vgs(th) (Max) @ Id:3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:75nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:-
- Power - Max:1.4W
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® SO-8 Dual
- Supplier Device Package:PowerPAK® SO-8 Dual
