SI5511DC-T1-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N/P-CH 30V 4A 1206-8
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet SI5511DC-T1-GE3 Datasheet
-
ECAD Model
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In Stock: 147
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Technical Details
- Series:TrenchFET®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Obsolete
- FET Type:N and P-Channel
- FET Feature:Logic Level Gate
- Drain to Source Voltage (Vdss):30V
- Current - Continuous Drain (Id) @ 25°C:4A, 3.6A
- Rds On (Max) @ Id, Vgs:55mOhm @ 4.8A, 4.5V
- Vgs(th) (Max) @ Id:2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:7.1nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds:435pF @ 15V
- Power - Max:3.1W, 2.6W
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SMD, Flat Lead
- Supplier Device Package:1206-8 ChipFET™
