SIA950DJ-T1-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET 2N-CH 190V 0.95A SC-70-6
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet SIA950DJ-T1-GE3 Datasheet
-
ECAD Model
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In Stock: 167
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Technical Details
- Series:LITTLE FOOT®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Obsolete
- FET Type:2 N-Channel (Dual)
- FET Feature:Logic Level Gate
- Drain to Source Voltage (Vdss):190V
- Current - Continuous Drain (Id) @ 25°C:950mA
- Rds On (Max) @ Id, Vgs:3.8Ohm @ 360mA, 4.5V
- Vgs(th) (Max) @ Id:1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:4.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:90pF @ 100V
- Power - Max:7W
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® SC-70-6 Dual
- Supplier Device Package:PowerPAK® SC-70-6 Dual
