SI3529DV-T1-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N/P-CH 40V 2.5A 6-TSOP
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet SI3529DV-T1-GE3 Datasheet
-
ECAD Model
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In Stock: 159
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Technical Details
- Series:TrenchFET®
- Package:Tape & Reel (TR)
- Part Status:Obsolete
- FET Type:N and P-Channel
- FET Feature:Logic Level Gate
- Drain to Source Voltage (Vdss):40V
- Current - Continuous Drain (Id) @ 25°C:2.5A, 1.95A
- Rds On (Max) @ Id, Vgs:125mOhm @ 2.2A, 10V
- Vgs(th) (Max) @ Id:3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:205pF @ 20V
- Power - Max:1.4W
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package:6-TSOP
