SI5515DC-T1-GE3

Technical Details

• Series:TrenchFET®
• Package:Tape & Reel (TR)
• Part Status:Obsolete
• FET Type:N and P-Channel
• FET Feature:Logic Level Gate
• Drain to Source Voltage (Vdss):20V
• Current - Continuous Drain (Id) @ 25°C:4.4A, 3A
• Rds On (Max) @ Id, Vgs:40mOhm @ 4.4A, 4.5V

• Vgs(th) (Max) @ Id:1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:7.5nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds:-
• Power - Max:1.1W
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:8-SMD, Flat Lead
• Supplier Device Package:1206-8 ChipFET™