AUIRF7341Q
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET 2N-CH 55V 5.1A 8SOIC
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet AUIRF7341Q Datasheet
-
ECAD Model
- Share
In Stock: 161
Can ship immediately
Pricing:
Call for price or sumbit a RFQ
Quote It
Technical Details
- Series:HEXFET®
- Package:Tube
- Part Status:Obsolete
- FET Type:2 N-Channel (Dual)
- FET Feature:Logic Level Gate
- Drain to Source Voltage (Vdss):55V
- Current - Continuous Drain (Id) @ 25°C:5.1A
- Rds On (Max) @ Id, Vgs:50mOhm @ 5.1A, 10V
- Vgs(th) (Max) @ Id:3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:44nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:780pF @ 25V
- Power - Max:2.4W
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package:8-SO
