SIZ900DT-T1-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET 2N-CH 30V 24A POWERPAIR
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet SIZ900DT-T1-GE3 Datasheet
-
ECAD Model
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In Stock: 173
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Technical Details
- Series:TrenchFET®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Obsolete
- FET Type:2 N-Channel (Half Bridge)
- FET Feature:Logic Level Gate
- Drain to Source Voltage (Vdss):30V
- Current - Continuous Drain (Id) @ 25°C:24A, 28A
- Rds On (Max) @ Id, Vgs:7.2mOhm @ 19.4A, 10V
- Vgs(th) (Max) @ Id:2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:45nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:1830pF @ 15V
- Power - Max:48W, 100W
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:6-PowerPair™
- Supplier Device Package:6-PowerPair™
