APTC90H12T1G

Microsemi
In Stock: 128

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Technical Details

  • Series:CoolMOS™
  • Package:Tray
  • Part Status:Obsolete
  • FET Type:4 N-Channel (H-Bridge)
  • FET Feature:Super Junction
  • Drain to Source Voltage (Vdss):900V
  • Current - Continuous Drain (Id) @ 25°C:30A
  • Rds On (Max) @ Id, Vgs:120mOhm @ 26A, 10V

 

  • Vgs(th) (Max) @ Id:3.5V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs:270nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:6800pF @ 100V
  • Power - Max:250W
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:SP1
  • Supplier Device Package:SP1

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