VQ1001P-2

Technical Details

• Series:-
• Package:Tube
• Part Status:Obsolete
• FET Type:4 N-Channel
• FET Feature:Logic Level Gate
• Drain to Source Voltage (Vdss):30V
• Current - Continuous Drain (Id) @ 25°C:830mA
• Rds On (Max) @ Id, Vgs:1.75Ohm @ 200mA, 5V

• Vgs(th) (Max) @ Id:2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs:-
• Input Capacitance (Ciss) (Max) @ Vds:110pF @ 15V
• Power - Max:2W
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Through Hole
• Package / Case:-
• Supplier Device Package:14-DIP